Enhancement mode GaN-based multiple-submicron channel array gate-recessed fin metal-oxide-semiconductor high-electron mobility transistors
Author:
Affiliation:
1. Department of Photonics Engineering, Yuan Ze University, Taoyuan 320, Taiwan, Republic of China
2. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China
Funder
Ministry of Science and Technology, Taiwan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5022029
Reference19 articles.
1. Application of GaN-based heterojunction FETs for advanced wireless communication
2. AlGaN/GaN HEMTs on (111) silicon substrates
3. High frequency and low frequency noise of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method
4. Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs
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1. Design and investigation of novel ultra-high-voltage junction field-effect transistor embedded with NPN*;Chinese Physics B;2021-07-01
2. Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress*;Chinese Physics B;2021-07-01
3. Fin-Gated Nanochannel Array Gate-Recessed AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors;IEEE Transactions on Electron Devices;2020-05
4. Normally off AlGaN/GaN ion-sensitive field effect transistors realized by photoelectrochemical method for pH sensor application;Superlattices and Microstructures;2019-04
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