High frequency and low frequency noise of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method-Reference-Cited by-同舟云学术

High frequency and low frequency noise of AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method

Published:2008-07-28 Issue:4 Volume:93 Page:043511
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Li-Hsien,Yeh Su-Hao,Lee Ching-Ting

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2966142

Reference19 articles.

1. Effects of built-in polarization on InGaN-GaN vertical-cavity surface-emitting lasers

2. White Light Emission of Monolithic Carbon-Implanted InGaN–GaN Light-Emitting Diodes

3. High-Energy Proton Irradiation of MgO/GaN Metal Oxide Semiconductor Diodes

4. AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN

5. Application of GaN-based heterojunction FETs for advanced wireless communication

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