Effect of indium composition on carrier escape in InGaN/GaN multiple quantum well solar cells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4813623
Reference17 articles.
1. Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
2. Design and characterization of GaN∕InGaN solar cells
3. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
4. High-quality InGaN∕GaN heterojunctions and their photovoltaic effects
5. Improved Efficiency by Using Transparent Contact Layers in InGaN-Based p-i-n Solar Cells
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1. Enhancement of Short-Circuit Current Density in Superlattice-Based InGaN/GaN Solar Cells;ECS Journal of Solid State Science and Technology;2023-09-01
2. Built-in electric field and hydrostatic pressure effects on exciton states in a wurtzite (In,Ga)N/GaN coupled double quantum well;Journal of the Korean Physical Society;2023-08-02
3. Effects of strain and hydrostatic pressure on exciton properties in asymmetric zinc-blende (In,Ga)N/GaN coupled double quantum wells;Journal of Physics and Chemistry of Solids;2023-02
4. Trap-assisted tunneling as possible carrier escape mechanism in InGaN/GaN light-emitting diodes;Journal of Applied Physics;2022-11-07
5. The correlation between carrier escape and injection in InGaN/GaN light-emitting diodes;Applied Physics Express;2022-08-12
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