Threshold behavior in backgating in GaAs metal–semiconductor field-effect transistors: Induced by limitation of channel–substrate junction to leakage current
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.364129
Reference10 articles.
1. Carrier injection and backgating effect in GaAs MESFET's
2. Mechanism of electrostatic potential conduction in semi‐insulating substrates
3. Current‐controlled negative differential conductivity in semi‐insulating GaAs
4. Numerical simulation of sidegating effect in GaAs MESFET's
5. Sidegating effect on Schottky contact in ion‐implanted GaAs
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1. A new analytical model for photo-dependent capacitances of GaAs MESFET’s with emphasis on the substrate related effects;Solid-State Electronics;2006-11
2. Disorder and ferromagnetism in diluted magnetic semiconductors;Physical Review B;2003-04-02
3. Determination of deep trap concentration at channel–substrate interface in GaAs MESFET using sidegating measurements;Solid-State Electronics;2002-09
4. Sidegating effect in ion-implanted GaAs self-aligned gate MESFET MMICs;1998 GaAs Reliability Workshop. Proceedings (Cat. No.98EX219)
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