A new analytical model for photo-dependent capacitances of GaAs MESFET’s with emphasis on the substrate related effects-Reference-Cited by-同舟云学术

A new analytical model for photo-dependent capacitances of GaAs MESFET’s with emphasis on the substrate related effects

Published:2006-11 Issue:11-12 Volume:50 Page:1716-1727
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Narasimha Murty Neti V.L.,Jit S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Microwave photonics

2. Optical control of microwave signals using GaAs FETs

3. Rodriguez-Tellez J, Mezher KA, Ali NT, Fernandez T, Mediavilla A, Tazon A, et al. In: Proc electronics, circuits & systems (ICECS), 10th international conference, Sharjah, UAE, December 2003. p. 970.

4. A novel FET model including an illumination intensity parameter for simulation of optically controlled millimeter-wave oscillators

5. New optoelectronic integrated device for optically controlled microwave oscillators

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