Mechanism of electrostatic potential conduction in semi‐insulating substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343466
Reference9 articles.
1. Backgating in GaAs MESFET's
2. The effect of backgating on the design and performance of GaAs digital integrated circuits
3. Status of the surface and bulk parasitic effects limiting the performances of GaAs IC's
4. Optimization of low-noise GaAs MESFET's
5. GaAs MESFET interface considerations
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2. Two-dimensional device simulation of AlGaN/GaN heterojunction FET side-gating effect;Japanese Journal of Applied Physics;2014-10-22
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