Status of the surface and bulk parasitic effects limiting the performances of GaAs IC's-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Status of the surface and bulk parasitic effects limiting the performances of GaAs IC's

Published:1985-03 Issue:1-3 Volume:129 Page:119-138
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Rocchi Marc

Publisher

Elsevier BV

Subject

General Engineering

Reference42 articles.

1. Schottky barrier gate field effect transistor

2. High-speed integrated logic with GaAs MESFET's;Van Tuyl;IEEE J. Solid-State Circuits,1974

3. High-speed GaAs MSI;Tuyl;ISSCC Dig. Tech. Papers,1976

4. A high-speed LSI GaAs 8 × 8 bit parallel multiplier;Lee;IEEE J. Solid-State Circuits,1982

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation;Japanese Journal of Applied Physics;2016-06-10

2. Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors;Journal of Applied Physics;2011-04

3. Hot-electron effects on AlGaAs/InGaAs/GaAs PHEMTs under accelerated DC stresses;Microelectronics Reliability;2006-12

4. DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues;Microelectronics Reliability;2005-09

5. Noise Characteristics of InGaP-Gated PHEMTs Under High Current and Thermal Accelerated Stresses;IEEE Transactions on Electron Devices;2005-08

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP