Gate- and drain-lag effects in (Mg,Zn)O-based metal-semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3569628
Reference29 articles.
1. Recent advances in ZnO transparent thin film transistors
2. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
3. Transparent thin-film transistors with zinc indium oxide channel layer
4. p-channel thin-film transistor using p-type oxide semiconductor, SnO
5. Transparent semiconducting oxides: materials and devices
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Transparent JFETs Based on $p$ -NiO/ $n$ -ZnO Heterojunctions;IEEE Transactions on Electron Devices;2015-12
2. Comparison of ZnO-Based JFET, MESFET, and MISFET;IEEE Transactions on Electron Devices;2013-06
3. Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate dielectrics;Journal of Applied Physics;2011-11-15
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