Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate dielectrics-Reference-Cited by-同舟云学术

Influence of source and drain contacts on the properties of the indium-zinc oxide thin-film transistors based on anodic aluminum oxide gate dielectrics

Published:2011-11-15 Issue:10 Volume:110 Page:103703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lan Linfeng,Xu Miao,Peng Junbiao,Xu Hua,Li Min,Luo Dongxiang,Zou Jianhua,Tao Hong,Wang Lei,Yao Rihui

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3660791

Reference21 articles.

1. Organic electroluminescent diodes

2. Light-emitting diodes based on conjugated polymers

3. Organic light-emitting diode driven by organic thin film transistor on plastic substrates

4. Flat panel displays for ubiquitous product applications and related impurity doping technologies

5. 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array

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