Bias‐dependent photoresponse ofp+inGaAs/AlAs/GaAs diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97648
Reference10 articles.
1. Photocollection efficiency and interface charges of MBE‐grown abruptp(GaAs) ‐N(Al0.33Ga0.67As) heterojunctions
2. Measurement of isotype heterojunction barriers byC‐Vprofiling
3. XPS measurement of GaAs–AlAs heterojunction band discontinuities: Growth sequence dependence
4. Determination of the valence‐band discontinuity between GaAs and (Al,Ga)As by the use ofp+‐GaAs‐(Al,Ga)As‐p−‐GaAs capacitors
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1. Zero bias PIN photodetector based on gradient band distribution and doping gradient profile;Infrared Physics & Technology;2014-11
2. A study of low-bias photocurrent gradient of avalanche photodiodes;IEEE Transactions on Electron Devices;2002-12
3. Photocurrent oscillations by sequential phonon emission on GaAs-GaAlAs heterostructures;Semiconductor Science and Technology;1989-03-01
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