Low temperature annealing of Be‐implanted GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332468
Reference15 articles.
1. Ion implantation in III–V compounds
2. Mg and Be Ion Implanted GaAs
3. Uniform‐carrier‐concentrationp‐type layers in GaAs produced by beryllium ion implantation
4. Photoluminescence from Be‐implanted GaAs
5. Temperature dependence of photoluminescence from Be‐implanted GaAs
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2. Analysis of lossy optical materials possessing graded refractive index profiles;Optical Engineering;1994-09-01
3. Optical studies of germanium implanted with high dose oxygen;Journal of Applied Physics;1990-11
4. Amorphization and solid‐phase epitaxial growth in tin‐ion‐implanted gallium arsenide;Journal of Applied Physics;1990-05
5. Activation of free‐charge carriers in Be‐implanted GaAs annealed at low temperatures;Journal of Applied Physics;1986-03-15
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