Investigation of InGaN/GaN laser degradation based on luminescence properties
Author:
Affiliation:
1. Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou 215123, China
2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Funder
the opening Project of Science and Technology on Reliability and Application Technology of Electronic Component Laboratory
the Science and Technology Support Project of Jiangsu Province
the Strategic Laboratory Priority Research Program of Chinese Academy of Sciences
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4953236
Reference22 articles.
1. AlGaInN Violet Laser Diodes Grown on GaN Substrates with Low Aspect Ratio
2. Role of the thermal boundary resistance of the quantum well interfaces on the degradation of high power laser diodes
3. Degradation of InGaN-based laser diodes analyzed by means of electrical and optical measurements
4. Dislocation Related Issues in the Degradation of GaN-Based Laser Diodes
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1. Effect of in situ degradation on the atomic structure and optical properties of GaN-based green light-emitting diodes;Applied Physics Letters;2020-11-23
2. Investigation of Carrier Recombination Dynamics of Light-Emitting Diode Based on InGaN Quantum Dots;SPECTROSC SPECT ANAL;2020
3. Degradation study of InGaN-based laser diodes grown on Si;Journal of Physics D: Applied Physics;2020-07-13
4. Rapid degradation of InGaN/GaN green laser diodes;Superlattices and Microstructures;2020-06
5. Total-InGaN-thickness dependent Shockley-Read-Hall recombination lifetime in InGaN quantum wells;Journal of Applied Physics;2020-01-07
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