Role of the thermal boundary resistance of the quantum well interfaces on the degradation of high power laser diodes
Author:
Funder
Spanish Ministry of Science and Innovation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3622508
Reference18 articles.
1. Recombination enhanced defect reactions
2. Study of the degradation of AlGaAs-based high-power laser bars: V defects
3. Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes
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