Molecular beam epitaxial growth of high quality GaAs on untilted (001) Si substrates assisted by electron beam irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103899
Reference12 articles.
1. Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
2. Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)
3. GaAs MESFET's fabricated on monolithic GaAs/Si substrates
4. Low‐threshold high‐efficiency AlGaAs‐GaAs double‐heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition
5. Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
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1. Effects of Substrate Cleaning on the Properties of GaAs Epilayers Grown on Si(100) Substrate by Molecular Beam Epitaxy;Journal of the Korean Vacuum Society;2010-09-30
2. Effect of electron-beam irradiation on the magnetic properties of Ga1−xMnxAs thin films grown on GaAs (100) substrates;Solid State Communications;2005-08
3. Improvement of the crystallinity of a GaAs epitaxial film grown on a Si substrate using a Si/SiGe/Ge buffer layer;Thin Solid Films;1996-06
4. Improvement of the crystallinity of GaAs epitaxial layers grown on Si substrates assisted by electron beam irradiation;Thin Solid Films;1996-06
5. Reduction of the dislocation density for GaAs thin films on Si substrates grown by molecular beam epitaxy using the two-step growth method;Journal of Materials Science Letters;1995
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