Effects of Substrate Cleaning on the Properties of GaAs Epilayers Grown on Si(100) Substrate by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Effects of Substrate Cleaning on the Properties of GaAs Epilayers Grown on Si(100) Substrate by Molecular Beam Epitaxy

Published:2010-09-30 Issue:5 Volume:19 Page:371-376
ISSN:1225-8822
Container-title:Journal of the Korean Vacuum Society
language:en
Short-container-title:Journal of the Korean Vacuum Society

Author:

Cho Min-Young,Kim Min-Su,Leem Jae-Young

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kvs/JAKO201033538928426.pdf

Reference13 articles.

1. MOCVD growth of high efficiency current-matched tandem solar cell

2. Molecular beam epitaxial growth of high quality GaAs on untilted (001) Si substrates assisted by electron beam irradiation

3. Crack-free GaAs epitaxy on Si by using midpatterned growth: Application to Si-based wavelength-selective photodetector

4. n‐Type Doping Techniques in Silicon Molecular Beam Epitaxy by Simultaneous Arsenic Ion Implantation and by Antimony Evaporation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ Monitoring of GaN Epilayers by Spectral Reflectance;Journal of the Korean Vacuum Society;2011-09-30

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