Electronic structure and defects of high dielectric constant gate oxide La2Hf2O7
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2433031
Reference24 articles.
1. La2Hf2O7 high-κ gate dielectric grown directly on Si(001) by molecular-beam epitaxy
2. Complex admittance analysis for La2Hf2O7/SiO2 high-κ dielectric stacks
3. Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si
4. Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy
5. Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator
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