Correlation of stress with light‐induced defects in hydrogenated amorphous silicon films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97493
Reference12 articles.
1. Effect of silane dilution on intrinsic stress in glow discharge hydrogenated amorphous silicon films
2. Effect of Deposition Conditions on Intrinsic Stress in a-Si: H Films
3. Intrinsic stress and hydrogen bonding in glow‐discharge amorphous silicon films
4. Hydrogen-related mechanical stress in amorphous silicon and plasma-deposited silicon nitride
5. Role of mechanical stress in the light‐induced degradation of hydrogenated amorphous silicon
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1. Optimisation of p-doped μc-Si:H Emitter Layers in Crystalline-amorphous Silicon Heterojunction Solar Cells;Energy Procedia;2012
2. Microscopic mechanisms for creation and removal of metastable dangling bonds in hydrogenated amorphous silicon;Physical Review B;2002-10-31
3. Stress and thermomechanical properties of amorphous hydrogenated germanium thin films deposited by glow discharge;Journal of Applied Physics;1998-09-15
4. Detection of photoinduced structural change in a-Si:H by bending effect;Journal of Non-Crystalline Solids;1998-05
5. Correlation of Stress With Photo-Degradation in Hydrogenated Amorphous Silicon Prepared by Hot-Wire CVD;MRS Proceedings;1997
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