Epitaxial orientation of III-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2353810
Reference15 articles.
1. Impact of nucleation conditions on the structural and optical properties ofM-plane GaN(11̄00) grown on γ-LiAlO2
2. Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition
3. Molecular-beam epitaxy of p-type m-plane GaN
4. Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy
5. AlN epitaxial growth on off-angle R-plane sapphire substrates by MOCVD
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3. Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates;Semiconductor Science and Technology;2022-11-11
4. Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions;Journal of Applied Physics;2015-07-07
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