Trapping of gold by nanocavities induced by H+ or He++ implantation in float zone and Czochralski grown silicon wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1394917
Reference21 articles.
1. Proximity gettering of transition metals in separation by implanted oxygen structures
2. Efficiency and thermal stability of Pt gettering in crystalline Si
3. Solute Binding at Void Surfaces in Silicon and germanium
4. Gettering of metals by He induced voids in silicon
5. Proximity gettering of Au to ion beam induced defects in silicon
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2. Getter formation in silicon by implantation of antimony ions;Physics of the Solid State;2013-06
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5. He implantation induced nanovoids in crystalline Si;Materials Science and Engineering: B;2009-03
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