Efficiency and thermal stability of Pt gettering in crystalline Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363381
Reference20 articles.
1. A comparison of gettering techniques for very large scale integration
2. Metal Precipitates in Silicon p‐n Junctions
3. Breakdown in silicon oxides—correlation with Cu precipitates
4. Breakdown in silicon oxides (II)—correlation with Fe precipitates
5. Characterization of oxide layers grown on implanted silicon
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1. Effect of Proton Irradiation Dose on the Gettering Efficiency of Platinum and the Performance of Local Lifetime-Controlled Power Diodes;Japanese Journal of Applied Physics;2007-02-08
2. Influence of metal trapping on the shape of cavities induced by high energy He+ implantation;Journal of Applied Physics;2006-02-15
3. Prevention of impurity gettering in the RP/2 region of ion-implanted silicon by defect engineering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-01
4. Nickel Gettering in Silicon: Role of Oxygen;Solid State Phenomena;2001-11
5. Gold Gettering by H+ or He++ Ion Implantation Induced Cavities and Defects in Cz Silicon Wafers;Solid State Phenomena;2001-11
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