The restricted random dislocation distribution model to describe ensembles of dislocations with a screw component in ZnO layers with a mosaic structure

Author:

Schifano R.1ORCID,Wierzbicka A.1ORCID,Dluzewski P.1ORCID,Domagala J. Z.1ORCID,Wozniak W.1,Kurowska B.1,Bazioti C.2ORCID,Guziewicz E.1ORCID

Affiliation:

1. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

2. Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048, Blindern, N-0316 Oslo, Norway

Abstract

By applying the restricted random dislocation distribution model, solved using a discrete Hankel transform approach, it is shown that the shapes and characteristics of the [Formula: see text]-scans of the ZnO 00.2 reflection are mainly determined by the strain field introduced by dislocations with a screw component. On the other hand, no clear evidence of mosaicity or interfacial region contributions is found despite the layers exhibiting a [Formula: see text] axis oriented residual columnar structure and a highly defective interface being present. The applied model not only permits a more precise estimation of the densities of dislocations, which present a screw component with respect to methods based on the analysis of the 00.2 peak [Formula: see text]-scan FWHM, but also gives an indication of their distribution characteristics with the extracted values, as well as their homogeneous/quasi-regular spacing, being confirmed by cross-sectional transmission electron microscopy observations.

Funder

Polish National Science Centre

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Defects in semiconductors;Journal of Applied Physics;2022-10-21

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