The restricted random dislocation distribution model to describe ensembles of dislocations with a screw component in ZnO layers with a mosaic structure
Author:
Affiliation:
1. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
2. Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048, Blindern, N-0316 Oslo, Norway
Abstract
Funder
Polish National Science Centre
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0086295
Reference48 articles.
1. Transparent Conductive Zinc Oxide
2. Metal and Metal Oxides for Energy and Electronics
3. Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering
4. A comparative study of electronic and structural properties of polycrystalline and epitaxial magnetron-sputtered ZnO:Al and Zn1-xMgxO:Al Films—Origin of the grain barrier traps
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