Diffusion of zinc acceptors in InAsP by the metal-organic vapor-phase diffusion technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119682
Reference15 articles.
1. Optical properties of and strained-layer superlattices and heterostructures
2. InAsyP1−y/InP multiple quantum well optical modulators for solid‐state lasers
3. Growth of strain‐balanced InAsP/InGaP superlattices for 1.06 μm optical modulators
4. Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators
5. Zn Diffusion into InP Using Dimethylzinc as a Zn Source
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1. Optical properties of Zn-diffused InP layers for the planar-type InGaAs/InP photodetectors;Journal of Semiconductors;2017-12
2. Large-Area Planar Wavelength-Extended InGaAs p-i-n Photodiodes Using Rapid Thermal Diffusion With Spin-On Dopant Technique;IEEE Electron Device Letters;2015-08
3. Remote p-Doping of InAs Nanowires;Nano Letters;2007-04-11
4. MOVPE based Zn diffusion into InP and InAsP/InP heterostructures;Journal of Crystal Growth;2001-11
5. Zn doping of InP, InAsP/InP, and InAsP/InGaAs heterostructures through metalorganic vapor phase diffusion (MOVPD);Journal of Electronic Materials;2001-08
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