Epitaxial growth of InN thin films by plasma-enhanced atomic layer deposition
Author:
Affiliation:
1. School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
2. National Institute of LED on Si Substrate, Nanchang University, Nanchang 330047, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Jiangxi Province
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5054155
Reference30 articles.
1. Temperature dependence of the fundamental band gap of InN
2. InGaN Solar Cells: Present State of the Art and Important Challenges
3. Simulations, Practical Limitations, and Novel Growth Technology for InGaN-Based Solar Cells
4. Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
5. Highly Stable Photoelectrochemical Water Splitting and Hydrogen Generation Using a Double-Band InGaN/GaN Core/Shell Nanowire Photoanode
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