Measurement of deep states in undoped amorphous silicon by current transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336715
Reference30 articles.
1. Trapping parameters of dangling bonds in hydrogenated amorphous silicon
2. Identification of the Dangling-Bond State within the Mobility Gap ofa-Si: H by Depletion-Width-Modulated ESR Spectroscopy
3. Identification of deep-gap states ina-Si:H by photo- depopulation-induced electron-spin resonance
4. Majority and minority carrier lifetimes in doped a-Si junctions and the energy of the dangling-bond state
5. Below-gap primary photocurrent associated with correlated defects in hydrogenated amorphous silicon
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