Below-gap primary photocurrent associated with correlated defects in hydrogenated amorphous silicon
Author:
Affiliation:
1. a Faculty of Engineering Science , Osaka University , Toyonaka , Osaka , 560 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818508238955
Reference45 articles.
1. Exponential absorption edge in hydrogenated α-Si films
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4. Photoconductivity and transport in hydrogenated amorphous silicon
5. On anomalous drift mobility results in α-silicon alloys
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