Defect states in the intrinsic layer of amorphous silicon solar cells studied by the constant-photocurrent method-Reference-Cited by-同舟云学术

Defect states in the intrinsic layer of amorphous silicon solar cells studied by the constant-photocurrent method

Published:1998-04 Issue:4 Volume:77 Page:1049-1061
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Sládek Petr¹,Sťahel Pavel¹,Cabarrocas Pere Roca I.²,Morin Philippe²

Affiliation:

1. a Department of Physics , PdF Masaryk University Brno , Porici 7, CZ-603 00, Brno , Czech Republic

2. b Laboratoire de Physique des Interfaces et des Couches Minces, UPR CNRS 258 , Ecole Polytechnique , 91128 , Palaiseau Cedex , France

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/13642819808206404

Reference30 articles.

1. Arya , R. R. Bennet , M. S. Catalano , A. and Rajan , K. Technical Digest of the Third International Photovoltaic Science and Engineering Conference 3. 1987, Tokyo. pp.457

2. Role of interfaces on the performance and stability of amorphous silicon‐germanium alloy p‐i‐n solar cells

3. Observation by infrared transmission spectroscopy and infrared ellipsometry of a new hydrogen bond during light-soaking of a-Si:H

4. Role of Si–H bonding ina‐Si:H metastability

5. Determination of low absorption coefficients from absorptance measurements on thin films

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