Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1528727
Reference11 articles.
1. Polycrystalline silicon thin film transistors
2. Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)
3. Analysis of the drain breakdown mechanism in ultra-thin-film SOI MOSFETs
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer;Solid-State Electronics;2017-03
2. A Novel Self-Aligned Raised Source/Drain Polysilicon Thin-Film Transistor With a High-Current Structure;IEEE Electron Device Letters;2011-08
3. (Invited) Downscaling Issues in Polycrystalline Silicon TFTs;ECS Transactions;2010-10-01
4. High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain;IEEE Electron Device Letters;2010-03
5. A Reduced Mask-Count Technology for Complementary Polycrystalline Silicon Thin-Film Transistors With Self-Aligned Metal Electrodes;IEEE Electron Device Letters;2009-01
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