A Novel Self-Aligned Raised Source/Drain Polysilicon Thin-Film Transistor With a High-Current Structure-Reference-Cited by-同舟云学术

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A Novel Self-Aligned Raised Source/Drain Polysilicon Thin-Film Transistor With a High-Current Structure

Published:2011-08 Issue:8 Volume:32 Page:1080-1082
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chien Feng-Tso,Chen Chii-Wen,Liao Chien-Nan,Lee Tien-Chun,Wang Chi-Ling,Cheng Ching-Hwa,Chiu Hsien-Chin,Tsai Yao-Tsung

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/5961166/05898384.pdf?arnumber=5898384

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Improvement of 1T DRAM by Raised Source and Drain Engineering;IEEE Transactions on Electron Devices;2021-04

2. Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor;Membranes;2021-02-01

3. Tilted Back Exposure for Lightly Doped Drain Structure in Metal Induced Lateral Crystallization Poly Si Thin Film Transistors;Journal of Nanoscience and Nanotechnology;2013-10-01

4. High-Performance SLS Nanowire TFTs With Dual-Gate Structure;IEEE Transactions on Electron Devices;2013-07

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