Tilted Back Exposure for Lightly Doped Drain Structure in Metal Induced Lateral Crystallization Poly Si Thin Film Transistors-Reference-Cited by-同舟云学术

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Tilted Back Exposure for Lightly Doped Drain Structure in Metal Induced Lateral Crystallization Poly Si Thin Film Transistors

Published:2013-10-01 Issue:10 Volume:13 Page:7070-7072
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j. nanosci. nanotech.

Author:

Son Se Wan,Byun Chang Woo,Lee Yong Woo,Park Jae Hyo,Joo Seung Ki

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors;Solid-State Electronics;2017-06

2. Novel Fabrication of Lightly Doped-Drain for Suppressing the Leakage Current in Polycrystalline Silicon Thin-Film Transistor;Journal of Nanoscience and Nanotechnology;2017-05-01

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