Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer-Reference-Cited by-同舟云学术

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Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer

Published:2017-03 Issue: Volume:129 Page:6-9
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee Sol Kyu,Seok Ki Hwan,Chae Hee Jae,Lee Yong Hee,Han Ji Su,Jo Hyeon Ah,Joo Seung Ki

Funder

Seoul National University, Seoul, Republic of Korea

Ministry of Education

BK21 PLUS SNU Materials Division for Educating Creative Global Leaders

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. 5.2:Invited Paper: TFT-LCDs as the Future Leading Role in FPD

2. 35.4: A 2.1-inch AMOLED Display Based on Metal-Induced Laterally Crystallized Polycrystalline Silicon Technology

3. 21.3: Invited Paper: Latest Development of “System-on-Glass” Display with Low Temperature Poly-Si TFT

4. Two-Stage Degradation of p-Type Polycrystalline Silicon Thin-Film Transistors Under Dynamic Positive Bias Temperature Stress

5. Effect of grain boundaries on hot-carrier induced degradation in large grain polysilicon thin-film transistors

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Systematic investigation on anode etching residue widely generated in manufacturing of low‐temperature polycrystalline‐Si active matrix organic light‐emitting diode;Journal of the Society for Information Display;2022-01-20

2. Investigation on characteristics of millisecond solid-phase crystallized silicon films annealed by atmospheric pressure DC arc discharge micro-thermal-plasma-jet and their application to bottom-gate thin film transistors fabrication;Japanese Journal of Applied Physics;2021-09-14

3. Phonons and Thermal Expansion Behavior of NiSi and NiGe;Frontiers in Chemistry;2018-08-14

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