35.4: A 2.1-inch AMOLED Display Based on Metal-Induced Laterally Crystallized Polycrystalline Silicon Technology-Reference-Cited by-同舟云学术

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35.4: A 2.1-inch AMOLED Display Based on Metal-Induced Laterally Crystallized Polycrystalline Silicon Technology

Published:2004 Issue:1 Volume:35 Page:1128
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest

Author:

Wu Chunya,Meng Zhiguo,Li Juan,Zhang Xiaodan,Yang Guanghua,Xiong Shaozhen,Shi Xuejie,Peng Huajun,Wong Man,Kwok Hoi S.,Yin Sheng,Zhang Deqiang,Sun Tiepeng,Wang Liduo,Qiu Yong

Publisher

Wiley

Reference10 articles.

1. Lu, M. H.et al., Amorphous Silicon TFT Active-Matrix OLED Pixel, Proc. LEOS, p.130 (Orlando, Dec 1998).

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer;Solid-State Electronics;2017-03

2. Super-Large Domain Metal-Induced Radially Crystallized Poly-Si Made Using Ni(NO3)2/NH4OH Mixed Solution;Journal of Electronic Materials;2007-07-18

3. Application of metal induced unilaterally crystallized polycrystalline silicon thin-film transistor technology to system-on-glass display;Journal of Non-Crystalline Solids;2006-06

4. Vanadium pentoxide modified polycrystalline silicon anode for active-matrix organic light-emitting diodes;Applied Physics Letters;2005-10-10

5. Efficient organic light-emitting diodes using polycrystalline silicon thin films as semitransparent anode;Applied Physics Letters;2005-08-22

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