Optimum Er concentration for in situ doped GaN visible and infrared luminescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1390480
Reference10 articles.
1. Optoelectronic Properties and Applications of Rare-Earth-Doped GaN
2. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
3. Photoluminescence spectroscopy of erbium implanted gallium nitride
4. Luminescence characteristics of Er-doped GaN semiconductor thin films
5. Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy
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