Luminescence characteristics of Er-doped GaN semiconductor thin films-Reference-Cited by-同舟云学术

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Luminescence characteristics of Er-doped GaN semiconductor thin films

Published:2000-04 Issue: Volume:300-301 Page:207-213
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Zavada J.M,Thaik Myo,Hömmerich U,MacKenzie J.D,Abernathy C.R,Pearton S.J,Wilson R.G

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference21 articles.

1. Solid State Laser Engineering;Koechner,1992

2. High-gain erbium-doped traveling-wave fiber amplifier

3. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

4. Luminescence properties of erbium in III–V compound semiconductors

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1. Rare earth–doped semiconductor nanomaterials;Advanced Rare Earth-Based Ceramic Nanomaterials;2022

2. Enhancement in green and NIR emissions of Er3+ by energy transfer from ZnSe nanoparticles in borosilicate glass;Journal of Alloys and Compounds;2021-05

3. Effect of Erbium doping on GaN electronic and optical properties: First-principles study;Modern Physics Letters B;2019-09-30

4. Er/Si interdiffusion effect on photoluminescent properties of erbium oxide/silicon oxide films deposited on silicon;Journal of Luminescence;2017-12

5. Suppression effect of silicon (Si) on Er3+ 1.54μm excitation in ZnO thin films;AIP Advances;2016-08

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