Suppression effect of silicon (Si) on Er3+ 1.54μm excitation in ZnO thin films
Author:
Affiliation:
1. School of Information Science and Engineering, Shandong University, Jinan, Shandong 250100, China
2. Department of Radiation Oncology, Qilu Hospital, Shandong University, Jinan, Shandong 250100, China
Funder
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4961026
Reference31 articles.
1. Luminescence characteristics of Er-doped GaN semiconductor thin films
2. 1.54μm emission mechanism of Er-doped zinc oxide thin films
3. Er-related luminescence in Er,O-codoped InGaAs/GaAs multiple-quantum-well structures grown by organometallic vapor phase epitaxy
4. Fabrication and optical transition dynamics of Er-doped ZnO thin films formed on Si substrates
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1. Near-infrared emission in Er:ZnO thin films with embedded Si nanoparticles synthesized by ion implantation;Materials Research Express;2020-06-01
2. Effect of Er local surrounding on photoluminescence of Si Er co-doped ZnO film;Journal of Luminescence;2018-08
3. Molecular dynamics simulations of the effect of shape and size of SiO2 nanoparticle dopants on insulation paper cellulose;AIP Advances;2016-12
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