Direct detection of atomic arsenic desorption from Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109917
Reference14 articles.
1. Energetics of GaAs island formation on Si(100)
2. On the possibility of two-dimensional growth of GaAs on atomically flat Si(100) surfaces
3. GaAs epitaxy and heteroepitaxy: A scanning tunneling microscopy study
4. The morphology of As terminated Si(111) from desorption kinetics
5. Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique
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