The morphology of As terminated Si(111) from desorption kinetics
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference18 articles.
1. Overlayer energetics from thermal desorption on Si
2. Arsenic overlayer on Si(111): Removal of surface reconstruction
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1. Relief of surface stress at steps during displacive adsorption of As on Si(111);Applied Physics Letters;2012-05-14
2. Three-dimensional Strain Relaxation in the As/Si (001)-(2×1) Surface;Japanese Journal of Applied Physics;2002-01-15
3. Estimating pre-exponential factors for desorption from semiconductors: consequences for a priori process modeling;Applied Surface Science;2001-09
4. Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer;Applied Physics Letters;2001-03-12
5. CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics;Journal of Electronic Materials;2000-06
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