Improved diffusion barrier by stuffing the grain boundaries of TiN with a thin Al interlayer for Cu metallization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1409594
Reference12 articles.
1. Barriers Against Copper Diffusion into Silicon and Drift Through Silicon Dioxide
2. Barriers For Copper Interconnections
3. Ultrathin Diffusion Barriers/Liners for Gigascale Copper Metallization
4. Interdiffusions in Cu/reactive‐ion‐sputtered TiN, Cu/chemical‐vapor‐deposited TiN, Cu/TaN, and TaN/Cu/TaN thin‐film structures: Low temperature diffusion analyses
5. Reactively sputtered TiN as a diffusion barrier between Cu and Si
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