Individual oxide traps as probes into submicron devices

Author:

Restle Phillip

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 49 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors;IEEE Transactions on Electron Devices;2023-06

2. Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies;IEEE Transactions on Nuclear Science;2020-07

3. Origins of 1/f Noise in Electronic Materials and Devices: A Historical Perspective;Noise in Nanoscale Semiconductor Devices;2020

4. Randon telegraph signal phenomenology;Random Telegraph Signals in Semiconductor Devices;2017

5. $1/f$ Noise and Defects in Microelectronic Materials and Devices;IEEE Transactions on Nuclear Science;2015-08

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