Applicability of the Carrier Number Fluctuations Model for Random Telegraph Noise of Nanoscale MOSFETs Operating in Saturation
Author:
Affiliation:
1. STMicroelectronics,Crolles,France,38926
2. Univ. Grenoble Alpes, Univ. Savoie Mont Blanc,CNRS, Grenoble INP, IMEP-LAHC,Grenoble,France,38000
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10472738/10472739/10472748.pdf?arnumber=10472748
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3. Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs
4. Characterization of oxide traps in 0.15 μm2 MOSFETs using random telegraph signals
5. Extraction of 3D trap position in NAND flash memory considering channel resistance of pass cells and bit-line interference;Joe
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