Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs-Reference-Cited by-同舟云学术

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Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Electron Devices Meeting (IEDM)
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Author:

Sanghoon Lee ,Heung-Jae Cho ,Younghwan Son ,Lee Dong Seup,Shin Hyungcheol

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424227.pdf?arnumber=5424227

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Applicability of the Carrier Number Fluctuations Model for Random Telegraph Noise of Nanoscale MOSFETs Operating in Saturation;2023 International Conference on Noise and Fluctuations (ICNF);2023-10-17

2. Systematic Characterization of Random Telegraph Noise and Its Dependence with Magnetic Fields in MOSFET Devices;Noise in Nanoscale Semiconductor Devices;2020

3. Three-dimensional device simulation of random telegraph noise spectroscopy with Coulomb energy variation of the trap in high-k gate oxide;Japanese Journal of Applied Physics;2018-11-12

4. Zinc Oxide Transistors;ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics;2017-12-29

5. Investigation of capture and emission dependence between individual traps from complex random telegraph signal noise analysis;IEICE Electronics Express;2017

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