A simple technique for measuring the interface‐state density of the Schottky barrier diodes using the current‐voltage characteristics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338820
Reference11 articles.
1. Determination of the density and the relaxation time of silicon-metal interfacial states
2. Capacitive effects of Au and Cu impurity levels in Pt-N type Si Schottky barriers
3. Determination of surface state density in tunnel MOS devices from current-voltage characteristic
4. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
5. Relation between current‐voltage characteristics and interface states at metal‐semiconductor interfaces
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