Distribution of As atoms in InP/InPAs (1 monolayer)/InP heterostructures measured by x-ray crystal truncation rod scattering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363995
Reference12 articles.
1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
2. Crystal truncation rods and surface roughness
3. Surface X-ray diffraction
4. A new technique for the observation of X-ray CTR scattering by using an imaging plate detector
5. Atomic scale characterization of organometallic vapor phase epitaxial growth using in-situ grazing incidence X-ray scattering
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1. High‐Resolution Crystal Truncation Rod Scattering: Application to Ultrathin Layers and Buried Interfaces;Advanced Materials Interfaces;2020-02-20
2. Buried Heterostructure of Nitride Semiconductors Revealed by Laboratory Level X-ray CTR Scattering;Transactions of the Materials Research Society of Japan;2008
3. Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements;Surface Review and Letters;2003-04
4. Microstructural, magnetotransport, and electronic subband studies of InAsxP1−x/InP modulation-doped strained single quantum wells;Journal of Physics and Chemistry of Solids;2002-05
5. X-ray CTR scattering and interference for atomic-scale characterization of semiconductor heterostructures;Journal of Crystal Growth;2002-04
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