Crystalline Structure and the Role of Low-Temperature-Deposited AlN and GaN on Sapphire Revealed by X-Ray CTR Scattering and X-Ray Reflectivity Measurements

Author:

Takeda Y.1,Tabuchi M.1,Amano H.2,Akasaki I.2

Affiliation:

1. Department of Materials Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2. Department of Materials Science and Engineering, High Tech Research Center, Meijo University, 501, 1-chome, Shiogamaguchi, Tenpaku-ku, Nagoya 468-8502, Japan

Abstract

Crystalline and morphological quality of low-temperature (LT)-deposited and annealed AlN and GaN thin layers were investigated by X-ray crystal truncation rod (CTR) scattering and X-ray reflectivity measurements and atomic force microscope (AFM) observation. It was revealed that the LT-AlN layer was more uniform in terms of the crystalline structure and the layer thickness than the LT-GaN layer, before and after annealing. It suggests that LT-AlN is more suitable as a buffer layer between sapphire substrate and GaN.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

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