Atomic scale characterization of GaInN/GaN layers grown on sapphire substrates with low-temperature deposited AlN buffer layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Crystal quality and surface structure of sapphire and buffer layers on sapphire revealed by crystal truncation rod scattering
2. X-Ray Interference and Crystal Truncation Rod Observation of GaN and GaInN Layers Grown on Sapphire with AlN Buffer Layer
3. Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method
4. Crystal truncation rods and surface roughness
5. A new technique for the observation of X-ray CTR scattering by using an imaging plate detector
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3. In situ X-ray measurements of MOVPE growth of InxGa1−xN single quantum wells;Journal of Crystal Growth;2013-05
4. Evaluation of newly developed X-ray diffractometer equipped with Johansson monochromator;IOP Conference Series: Materials Science and Engineering;2011-09-19
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