Many-body effects on optical gain in strained hexagonal and cubic GaN/AlGaN quantum well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119549
Reference20 articles.
1. Perspective On Gallium Nitride
2. GaN, AlN, and InN: A review
3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
4. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
5. MOVPE growth of cubic GaN on GaAs using dimethylhydrazine
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2. Temperature characteristics of spontaneous emission and optical gain in blue InGaN/GaN quantum well structures;Journal of Applied Physics;2013-08-28
3. Effects of polarization on intersubband transitions of AlxGa1−xN/GaN multi-quantum wells;Chinese Physics B;2013-05
4. Theoretical approach to the excitonic response of GaAs nanomembranes in the averaged-strain approximation;Journal of the Optical Society of America B;2012-01-26
5. Many-body optical gain and intraband relaxation time of wurtzite InGaN∕GaN quantum-well lasers and comparison with experiment;Applied Physics Letters;2005-07-25
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