Temperature characteristics of spontaneous emission and optical gain in blue InGaN/GaN quantum well structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4819226
Reference34 articles.
1. The Blue Laser Diode
2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
3. Performance of High-Power AlInGaN Light Emitting Diodes
4. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
5. Improvements of external quantum efficiency of InGaN-based blue light-emitting diodes at high current density using GaN substrates
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1. The role of spontaneous and piezoelectric polarization fields on the spectral and power characteristics of InxGa1-xN/GaN superluminescent light emitting diodes;Optical and Quantum Electronics;2021-07
2. Study of the spectral and power characteristics of In0.2Ga0.8N/GaN superluminescent light-emitting diodes by taking into account the piezoelectric polarization fields;Indian Journal of Physics;2021-04-27
3. The effect of hydrostatic pressure on binding energy and polaron effect of bound polaron in wurtzite AlyGa1−yN/AlxGa1−xN parabolic quantum well;International Journal of Modern Physics B;2020-12-10
4. Temperature‐Dependent Polarized Photoluminescence from c‐plane InGaN/GaN Multiple Quantum Wells Grown on Stripe‐Shaped Cavity‐Engineered Sapphire Substrate;physica status solidi (b);2020-04
5. Free polaron energy levels in AlyGa1−yN/AlxGa1−xN triangle quantum well structures;Modern Physics Letters B;2017-06-14
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