Retardation of implantation damage annealing in InP due to local nonstoichiometry
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345553
Reference8 articles.
1. Interfacial constraints on device performance
2. Monolithic integration of a very low threshold GaInAsP laser and metal‐insulator‐semiconductor field‐effect transistor on semi‐insulating InP
3. Stoichiometric disturbances in ion implanted compound semiconductors
4. Solid phase epitaxial regrowth of ion‐implanted amorphized InP
5. Epitaxial regrowth of (100) InP layers amorphized by ion implantation at room temperature
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron-microscopy study of Fe-implanted InP;Applied Physics A Materials Science & Processing;1996-01
2. Production of semi‐insulating layers inn‐doped InP by Fe implantation;Journal of Applied Physics;1994-11
3. Structural and electrical characteristics of Ge and Se implanted InP after rapid thermal annealing;Journal of Applied Physics;1992-09-15
4. A new smoothing algorithm for statistical noise reduction;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-02
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