Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts-Reference-Cited by-同舟云学术

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Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts

Published:2014-03-17 Issue:11 Volume:104 Page:112101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Agrawal Ashish,Lin Joyce,Barth Michael,White Ryan,Zheng Bo,Chopra Saurabh,Gupta Shashank,Wang Ke,Gelatos Jerry,Mohney Suzanne E.,Datta Suman

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4868302

Reference11 articles.

1. Recent advances in Schottky barrier concepts

2. Electron tunneling and contact resistance of metal-silicon contact barriers

3. A New Route to Zero-Barrier Metal Source/Drain MOSFETs

4. Fermi-level depinning in metal/Ge Schottky junction and its application to metal source/drain Ge NMOSFET

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