Negative differential resistance at room temperature in δ ‐doped diodes grown by Si‐molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111813
Reference5 articles.
1. Electron resonant tunneling in Si/SiGe double barrier diodes
2. Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature
3. Demonstration of resonant transmission in InAs/GaSb/InAs interband tunneling devices
4. Kinetics of dopant incorporation using a low-energy antimony ion beam during growth of Si(100) films by molecular-beam epitaxy
5. Two‐band modeling of narrow band gap and interband tunneling devices
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1. Negative Differential Resistance Devices and Circuits;Comprehensive Semiconductor Science and Technology;2011
2. Resonant Tunneling Devices;Silicon Heterostructure Devices;2007-12-13
3. Resonant Tunneling Devices;Silicon Heterostructure Handbook;2005-11
4. Fermi-level oscillation inn-typeδ-dopedSi: A self-consistent tight-binding approach;Physical Review B;2005-09-20
5. Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique;Semiconductor Science and Technology;2001-08-10
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