Fermi-level oscillation inn-typeδ-dopedSi: A self-consistent tight-binding approach
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.72.125330/fulltext
Reference23 articles.
1. Selectively δ‐doped AlxGa1−xAs/GaAs heterostructures with high two‐dimensional electron‐gas concentrationsn2DEG≥1.5×1012cm−2for field‐effect transistors
2. Fermi edge singularity and screening effects in the absorption and luminescence spectrum of Si δ‐doped GaAs
3. Self‐aligned enhancement‐mode and depletion‐mode GaAs field‐effect transistors employing the δ‐doping technique
4. Negative differential resistance at room temperature in δ ‐doped diodes grown by Si‐molecular beam epitaxy
5. “p-on-n” Si interband tunnel diode grown by molecular beam epitaxy
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