Fermi-level oscillation inn-typeδ-dopedSi: A self-consistent tight-binding approach

Author:

Cartoixà X.,Chang Y. -C.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Electronic structure of boron and aluminum δ-doped layers in silicon;Journal of Applied Physics;2023-07-25

2. About possible THz modulator on the base of delta-doped QWs;Superlattices and Microstructures;2015-11

3. On intersubband absorption of radiation in delta-doped QWs;Physica E: Low-dimensional Systems and Nanostructures;2015-11

4. On some new effects in delta-doped QWs;Physica E: Low-dimensional Systems and Nanostructures;2015-02

5. Impurity binding energy for δ-doped quantum well structures;Bulletin of Materials Science;2014-10

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